【摘要】 采用激光脉冲沉积系统在Si(100)衬底上制备了ZnO薄膜.利用X射线衍射方法对其结构进行了表征,结果表明,所制备的ZnO薄膜具有优良的c轴取向和高质量的结晶度.采用扫描隧道显微镜测得ZnO薄膜微区的压电常数d33大约为13.8pm/V.并根据微区压电特性与ZnO薄膜的生长具有极性的特点对薄膜的生长机理进行了研究.得出了ZnO的生长方向为[0001],从而证实了ZnO薄膜生长过程中(0001)Zn面是易生长面.更多还原

【Abstract】 ZnO thin films was deposited on Si(100) substrates by PLD. Structural properties was then valued by X-ray diffraction and X-ray rocking curve to show that the ZnO films was high crystallinityand had a very strong preferred orientation along the c axis. STM was employed to analyze the microarea piezoelectric property. The piezoelectric constant of ZnO thin films is 13.8pm/V. The relationship of microarea piezoelectric property and the polar growth of ZnO films was discussed. It is indicated that the (0001)Zn face is easy growth in the ZnO films growth process.更多还原