【摘要】 随着超大规模集成电路的不断发展,薄栅氧化层的质量对器件和电路可靠性的作用越来越重要。经时绝缘击穿(TDDB)是评价薄栅氧化层质量的重要方法。文章着重于薄栅氧化层TDDB可靠性评价的斜坡电压试验方法的研究,基于斜坡电压实验,提取模型参数,分别利用线性场模型和定量物理模型,外推出工作电压下栅氧化层的寿命。通过分析斜坡电压实验时氧化层的击穿过程,提出斜坡电压实验时利用统一模型外推栅氧化层的寿命比较合适。更多还原

【Abstract】 With the development of very large scale integrated circuits(VLSI), the quality of thin gate oxides plays a very important role in the reliability of devices and circuits. Time-dependent dielectric breakdown (TDDB) is a major method to evaluate the quality of thin gate oxides. Model parameters are extracted from the voltage ramp test, and the lifetime is extrapolated based on the linear field model and quantitative physical model, respectively. As compared to the results, it is concluded that the united model is more suitable for TDDB lifetime evaluation.更多还原