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ULSI化学机械抛光的研究与展望
Research and Prospects of Chemical Mechanical Polishing for ULSI
【摘要】 随着半导体行业的飞速发展,集成电路特征尺寸的微细化,半导体薄膜表面的高平坦化对器件高性能、低成本、高成品率有着重要的影响。作为唯一能实现全局平坦化方法的化学机械抛光(CMP),近年来发展迅速,应用广泛。文章综述了化学机械抛光技术的发展现状:包括化学机械抛光设备、抛光液、抛光机理模型及应用研究进展;在此基础上,对CMP下一步发展的方向及其应用前景进行了展望。
【Abstract】 With the rapid development of semiconductor industry and ever shrinking feature size in ULSI’s,the planarization of semiconductor thin films becomes more and more important for high performance,low cost and high yield devices.As a unique global planarization method,chemical mechanical polishing (CMP),which has been developed at a fast pace,finds wide applications in ULSI’s in recent years.The development of CMP machines,consumables, and polishing mechanism are reviewed.The future trend of the technology and its application prospect are discussed.
【Key words】 Chemical mechanical polishing; Planarization; Thin film; ULSI; Slurry;
- 【文献出处】 微电子学 ,Microelectronics , 编辑部邮箱 ,2005年03期
- 【分类号】TN305
- 【被引频次】40
- 【下载频次】579