【摘要】 针对数字电路的开发和应用,设计了一种薄基区晶体管,其横向结构采用单侧基极引出。 采用全离子注入,实现了基区宽度为80~100 nm的npn纵向结构。基极用电压输入,Vbe在1.2 V附 近时,跨导峰值gmac(△Ic／△Vbe)=0.4 mS,βac(△Ic／△Ib)=2.5。当Vbe从0.5 V变到1.2 V时,gmac／ gm比βac／β大得多。跨导比电流增益更能准确地描述器件特性。这种器件更倾向于电压控制型器 件,用输入电压的变化可以很方便地控制器件开关状态的转换,特别适合于数字电路的开发和应 用。采用研制的器件连接了双稳态电路,在电压脉冲的控制下实现了双稳态的翻转。更多还原

【Abstract】 A narrow-base transistor with one-base contact is designed for digital IC application. Formed by all ion implantation on a p-type Si wafer, the npn transistor has a base width about 80-100 nm and the carrier concentration is 1018cm-3. The base is biased by voltage signals. When Vbe, is about 1. 2 V, βac(△Ic/△Ib)= 2. 5, gmac(△Ic/ △Vbe,) = 0. 4 mS and gmac/gm is much higher than βac/β. The transistor can be accurately characterized by its gm. This type of transistor tends to be a voltage-controlled device, and so it is suitable for digital IC’s. A toggle circuit is made using the device and the flip-flop is realized by controlled voltage.更多还原