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用开路电压法测晶体硅太阳电池少子寿命的研究

Measurement of the Lifetime of Minority Carrier in Crystal Silicon Solar-cell By Open-circuit Voltage Decay

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【作者】 彭银生陈庭金

【Author】 PENG Ying-sheng~1, CHEN Ting-jin~2(1.Mathematical Teaching and Research Section,Information Department,Medical College of Hainan,Haikou 571101,China;2.Institude of Solar Energy Research,Normal University of Yunnan,Kunming 650092,China)

【机构】 海南医学院信息部数理教研室云南师范大学太阳能研究所 海南海口571101云南昆明650092

【摘要】 根据太阳电池的工作原理,详细论述了用脉冲光源照射n/p结太阳电池瞬间时,由于光电压,即开路电压的建立,将有电子从n区通过n/p结向p区边界注入,这些注入p区的过剩电子(少子)在运动中复合所需的时间,我们定义为少子寿命.理论上给出了注入p区的电子复合带来的开路电压与寿命的关系式(Voc(t)),同时也研究了n/p结势垒电容放电对Voc(t)的影响.因此建议使用开路电压随时间的衰减关系式(Voc(t))测量少子寿命的方法.

【Abstract】 <Abstrcat> According to the operating principle of solar cell,it is dealt with in detail that when n-p junction of solar cell is irradiated with pulse light-source in a instantaneous time,there will be electrons injecting into the boundary of p zone via n-p junction from n zone,because of emerging of photo-voltage(ie.open-circuit voltage).These excess electrons injecting into p zone synthesize in motion.The time what the synthesis needs is defined as the lifetime of minority carrier.Theoretically,the relational expression(Voc(t)) between open-circuit voltage and minority carrier lifetime,which is brought about by the synthesis of electrons injecting into p zone,is presented; meantime, it is also studied what the barrier capacitance discharge of n-p junction has an influence on the open circuit-voltage.Thus it is suggested that the lifetime of minority carrier should be measured by the relationship (Voc(t)) that open-circuit voltage decays with time.

  • 【文献出处】 海南大学学报(自然科学版) ,Natural Science Journal of Hainan University , 编辑部邮箱 ,2005年02期
  • 【分类号】TM914
  • 【被引频次】1
  • 【下载频次】369
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