【摘要】 利用先进的微电子、微机械加工技术,研制了从300~1000μm共5种厚度的离子注入型P IN辐射探测器,选择其中300、450和1000μm三种规格进行漏电流、噪声水平和能谱分辨率等指标的测试,并与ORTEC探测器相比较。结果表明:北京大学研制的P IN探测器具有当前国际先进水平。在平均25.7℃下,漏电流在14nA左右,噪声水平约为7.4 keV,能谱分辨率约为16.9 keV。由于噪声水平较ORTEC探测器低,说明还有提高能谱分辨率的余地。更多还原

【Abstract】 We have developed ion-implanted PIN radiation detectors with five kinds of thickness by advanced microelectronic and micromechanical technology. Among them, three types with thickness of 300μm, 450μm, and 1000μm are chosen to do test experiments of the leak current, noise, and energy resolution. The results show that our PIN detectors are of good performances compatible to ORTEC detectors. Under (25.7℃) environment temperature, the average leak current is 14 nA, the noise is (7.4)keV, and the resolution is 16.9keV. The resolution may have the room to be improved since the noise is lower than ORTEC detectors.更多还原