【摘要】 文章介绍了我们利用脉冲激光沉积(PLD)方法原位生长MgB2超导薄膜的工作.实验采用两步法的方案:高真空条件下在Al2O3(001)衬底上沉积Mg-B混合物加覆盖Mg层的双层结构,然后将该前驱体在630℃左右的Ar气氛中原位退火,成功制备出了有较好重复性的MgB2超导薄膜,其最高的起始转变温度为36.5K,转变宽度在1K左右.我们认为该方法为进一步研究基于MgB2的多层结构器件提供了一种可行的发展思路.更多还原

【Abstract】 We report our work on the in-situ growth of superconducting MgB_ 2 films prepared by pulsed laser deposition. A two-step process was used to fabricate MgB_ 2 films. First, the mixture film of Mg and B was deposited onto Al_ 2 O_ 3 (001) substrate in a vacuum of 10~ -5 Pa with a Mg cap layer covered, then the precursor was in-situ annealed in Ar flux at about 630℃ for several minutes. Through this process, we have succeeded in preparing the superconducting MgB_ 2 films with a very good reproducibility. The films show an onset transition temperatureof 36.5 K with the transition width about 1 K. We believe this method provides a viable solution for the fabrication of multilayersuperconducting device based on MgB_ 2 films.更多还原