【摘要】 利用国际先进的 2μmInGaP/GaAsHBT工艺加工生产线进行了晶体管芯片的加工,并在器件测试的基础上开展了模型参数的提取.所研究的模型主要是针对异质结双极晶体管器件HBT特别是砷化镓异质结双极晶体管器件,在对常用的几种器件模型,如EM模型、GP模型和VBIC模型的特点做比较的基础上,详细介绍了一种基于IC-CAP系统的准确提取VBIC模型的方法.利用提取的VBIC模型对所制备器件进行了模拟仿真,仿真结果与测试结果相比较二者可以很好吻合至 20GHz.更多还原

【Abstract】 This article compares the characteristics of GP (Gummel-Poon) model and VBIC (vertical bipolar Inter-company) model for hetero-junction bipolar transistors (HBT), especially for InGaP/GaAs HBT. The procedures for extraction of VBIC model parameters based on the IC-CAP system are also introduced. The HBT chip was manufactured in an advanced 2 μm InGaP/GaAs HBT foundry in overseas. The HBT devices were measured and the VBIC model parameters were extracted from the measurement data. The simulation results using the VBIC model fit the measurement data well up to 20 GHz.更多还原