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低压化学气相沉积法制备ZnSe多晶及其性能研究
Fabrication of Polycrystalline ZnSe by Chemical Vapor Deposition and Its Properties
【摘要】 以单质 Zn,Se 和 H2为原料,采用低压化学气相沉积方法在温度为 630℃~750℃,压力为 300 Pa~1 000 Pa条件下制备出了性能优异的 ZnSe 多晶材料。性能测试表明,制备出的 CVD ZnSe 多晶材料在 0.55 μm~22 μm, 及 8 μm~14 μm 波段的平均透过率超过 70% (1 mm 厚),在 3.39 μm 处的应力双折射为 54 nm/cm。其光学透过性能与美国采用Zn 和 H2Se 气体为原料制备出的 CVD ZnSe 多晶非常接近。
【Abstract】 High-quality polycrystalline ZnSe fabricated by CVD method and its optical transmission are reported. A technique directly using Zn , Se and H2 as raw materials is adopted. The deposition temperature within the range of 630℃~750℃ and pressure of 300 Pa~ 1 000 Pa are selected.The transmission wavelength range of as-fabricated CVD ZnSe is measured to be 0.55 μm ~22 μm, and the average transmittance in the wavelength range of 8 μm~14 μm is in excess of 70%(1mm in thickness). The stress birefringence at 3.39 μm is 54 nm/cm. It shows that the optical transmission properties of as-fabricated CVD ZnSe are as good as those of CVD ZnSe fabricated using Zn and H2Se as raw materials.
【Key words】 ZnSe; infrared; chemical vapor deposition; CVD; transmission;
- 【文献出处】 稀有金属材料与工程 ,Rare Metal Materials and Engineering , 编辑部邮箱 ,2005年02期
- 【分类号】TB383
- 【被引频次】13
- 【下载频次】280