【摘要】 研制了不同SiO2 掺杂量 (0 %～ 10 % ,wt% )的WO3 纳米颗粒薄膜NO2 传感器。先由钨酸钠制得白钨酸 ,经加热分解白钨酸得WO3 粉体 ,并对粉体进一步超声细化 ;再用溶胶 -凝胶法制得SiO2 粉体 ,然后采用固相反应法进行掺杂。用XRD检测掺杂粉体的结构特征 ,并计算得出粉体颗粒平均粒径为 6 2nm。在Al2 O3 陶瓷管金电极上组装敏感膜 ,制作简单。制得的Taguchi型NO2 传感器的线性响应范围为 (5～ 30 )× 10 -6,响应 -回复快 ,稳定性和重现性好。更多还原

【Abstract】 Thin film NO₂ sensors were fabricated from SiO₂-doping WO₃ nanoparticles with various SiO₂ contents （0%～10%, wt%）. The WO₃ powder was obtained by the means of thermal pyrolysis of white tungstic acid starting from Na₂WO₃ then followed with ultrasonic treatment, and the SiO₂ powder was synthesized via the route of sol-gel. The SiO₂-WO₃ nanosize composites were prepared from solid-phase reactions and characterized by XRD. The average grain size of the composites was 62 nm. The sensitive films were structured on the Al₂O₃ substrate with Au electrode. This Taguchi-type sensor shows a linear response to NO₂ in the concentration range of 5×10\+\{-6\} to 30×10\+\{-6\}. It exhi-bits some advantages, such as simplicity of preparation, rapidity of measurement, and satisfactory stability and reproducibility.更多还原