【摘要】 根据载流子分布曲线近似,通过求解泊松方程,对多晶硅中的量子效应进行建摸,得出了一个基于物理的解析模型,该模型仅仅通过两个拟合参数可以将多个分散的状态模型简化为一个统一的模型.利用该模型对阈值电压进行了计算,其结果与数值模拟结果相吻合,证明了该模型的正确性和准确性.更多还原

【Abstract】 This paper proposes a model for polysilicon quantum effects in MOSFETs.Based on the least-squares curve fit,electron distribution functions are obtained.Then,solving Possion equations,a physically based analytical model is described.There are only two fitting parameters in the new model that can be used to describe different states such as accumulation,threshold,and strong inversion.However,different models used to depict those as different states,respectively.Additionally threshold voltages with the new model are calculated and compared with the numerical simulation results.The good agreement between them proves that the new model is correct and exact.更多还原