【摘要】 制作了蓝宝石衬底上生长的AlGaN/GaN高电子迁移率晶体管.0V栅压下,0·3μm栅长、100μm栅宽的器件的饱和漏电流密度为0·85A/mm,峰值跨导为225mS/mm;特征频率和最高振荡频率分别为45和100GHz;4GHz频率下输出功率密度和增益分别为1·8W/mm和9·5dB,8GHz频率下输出功率密度和增益分别为1·12W/mm和11·5dB.更多还原

【Abstract】 AlGaN/GaN high electron mobility transistors grown on sapphire substrates with a 0.3μm gate length and 100μm gate width are fabricated.The device reveals a drain current saturation density of 0.85A/mm at a gate voltage of 0V and a peak transconductance of 225mS/mm.The unity current gain cutoff frequency and maximum frequency of oscillation are obtained as 45 and 100GHz,respectively.The output power density and gain are 1.8W/mm and 9.5dB at 4GHz,and 1.12W/mm and 11.5dB at 8GHz.更多还原