【摘要】 分析了LDMOS(lateral DMOS)在一次雪崩击穿后的局部电热效应.提出并证明了等温分析和电热分析分别得到的LDMOS的触发点是不同的;分析了局部晶格温度在空间上的分布特点;并提出晶格温度弛豫时间会影响漏极电压弛豫时间.从而证明LDMOS工作于ESD(electrostatic discharge)保护的大电流区时,电热分析比等温分析的模拟结果与实验结果符合得更好.更多还原

【Abstract】 Local electro-thermal effects of LDMOS after the first avalanche breakdown are analyzed.The different trigger points of LDMOS’s intrinsic npn transistor by isothermal and non-isothermal methods are compared and analyzed.The space distributing characteristics of lattice temperature are described,and the influence of t_ temp(delay time of lattice temperature) on t_ drain(delay time of drain voltage) is proposed.Thus,it is shown that the simulation results of the non-isothermal method are more consistent with the experimental data than those of the isothermal method,under ESD stress conditions.更多还原