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退火过程中R_P缺陷模型及数值模拟
A Simple Model of R P Defects Evolution
【摘要】 根据一维动力学方程,提出了RP缺陷的演化模型,用于描述离子注入后硼杂质分布在退火过程中出现异常变化的物理现象.通过分析发现缺陷随退火时间呈指数变化,根据变化的时间常数与RP缺陷对间隙原子束缚能的大小有关的原理,提出RP缺陷对间隙原子的束缚能为2.41eV.将该模型模拟硼杂质随退火时间的分布时,得到缺陷的分布与硼原子的分布变化趋势一致,且变化的时间常数相近,这给出了退火中硼出现异常分布的一种新的解释.
【Abstract】 A model of R p defects evolution based on first order kinetic equations is proposed to describe the phenomenon of boron-peak evolution during annealing time after ion implanting.Simulation results show that the defects change exponentially in different annealing time,and the constant of exponential time is correlative with the binding energy between defects and interstitials,is 2.41eV in this model.The similar tendency and approximate evolution time show that the evolution of boron-peak is correlative with R P defects.
【Key words】 binding energy; segregation; R P defects; ion implant; annealing;
- 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2005年06期
- 【分类号】TN432
- 【下载频次】43