【摘要】 研究了氮离子注入对SIMOX器件电特性的影响.氮注入SIMOX的埋氧层并退火后,将减小前栅MOS FET/SIMOX的阈电压,提高其漏源击穿电压但对栅击穿电压影响较小.氮注入方式对SIMOX器件的I V特性有重要影响.更多还原

【Abstract】 Effects of nitrogen on the electrical characteristics of SIMOX devices are investigated.The experimental data show that by implanting a proper dose of nitrogen ions into the buried oxide of SIMOX wafers,the threshold voltages of n channel and p channel MOSFET/SIMOX decrease,and the drain-source breakdown voltages of nMOSFETs and pMOSFETs increase,but the gate breakdown voltage changes little.Nitrogen implantation processes play a very important role in the electrical performance of the nitride SIMOX devices.更多还原