【摘要】 通过实验成功得到了0 1μm槽栅结构CMOS器件,验证了理论结果的正确性,表明这是一种优良的小尺寸器件结构.该槽栅器件具有阈值电压漂移较小及较好抑制短沟道效应的特点,并分析了目前器件驱动电流较小的原因及解决办法.更多还原

【Abstract】 Grooved gate CMOS devices in the 0 1μm regime are fabricated and studied.The experiment results prove the correctivity of the simulations that grooved gate CMOS has excellent characteristics,such as low threshold voltage roll off,weak short channel effects.The reason of the small drain drivability is analyzed and the methods are presented.更多还原