【摘要】 采用脉冲激光薄膜沉积技术制备了超薄连续的铱硅化合物肖特基势垒薄膜,利用X射线光电子能谱、原子力显微镜、半导体性能自动测量系统对薄膜进行了分析。获得的样品在界面层为单相IrSi3,并对人体红外辐射有很好的响应特性,通过IV曲线估算样品的势垒高度约为0.116eV。更多还原

【Abstract】 Homogeneous iridium silicide Schottky barrier thin films were prepared by pulsed laser deposition,and were characterized by X-ray photoelectron spectrum,atomic force microscope and automatic system of electro-physical characterization.It shows the films component is IrSi₃,and has a very good response to human bodys infrared radiation.The Schottky barrier height was estimated to be about 0.116eV by using the current-voltage curve.更多还原