【摘要】 微波介质器件的薄膜化已经成为微波器件的一个研究热点,本文从微波介质陶瓷薄膜化角度在不同低介电常数的介质衬底上溅射制备了MCT陶瓷薄膜,实验结果表明:(110)晶面的单晶SiO2片上的可以在较低温度(610℃)下获得良好结晶情况,介电特性可以和块状材料的多晶MCT陶瓷薄膜相媲美。随着衬底温度升高,薄膜晶体结构逐步由游离MgO向微晶MCT、多晶MCT到粗大的柱状晶MCT变化。较好沉积温度是610℃～650℃。更多还原

【Abstract】 With the development of integration of microwave ceramic devices, dielectric ceramic thin films are studied widely. The preparation of MgTiO₃-CaTiO₃ thin films by RF sputtering onto different substrares is discussed. The results show that multi-crystal MCT, which regarded microwave dielectric properties as the bulk of ceramic, is obtained on （110） SiO₂. With raising temperature of substrate, the MCT changes form free MgO to micro-crystal, multi-crystal and bulky-crystal. The better deposition temperature is 610～650℃.更多还原