【摘要】 在多孔硅衬底上用射频溅射法沉积了非晶的SiC :Tb薄膜 .对样品在N2 中进行了不同温度的退火处理 .用傅里叶红外变换谱分析了样品的结构 .用荧光光谱仪测试了样品的光致发光 ,在紫外、可见光区域观测到了强的发光峰 .发现随着衬底加热温度和样品退火温度的变化 ,发光峰有明显的强度变化和微弱的蓝移现象 .分析了产生这种现象的机理 ,得出了紫外区域的发光峰是由于氧缺乏中心引起的 ,而可见区的发光是由于Tb离子产生的更多还原

【Abstract】 The SiC:Tb films were deposited on porous silicon substrate by rf sputtering. The samples prepared were annealed in N 2 atmosphere at different temperatures, and Fourier transform infrared has been used to characterize the structure of them. We observed a strong photoluminescence(PL) spectrum at room temperature in the ultraviolet(UV) and visible regions. We found that the UV emission has obvious changed and a slight blue shift was observed with the change of annealing temperature. The UV and visible PLs were attributed to oxygen deficit center(ODC) and Tb 3+ respectively.更多还原