【Abstract】 A novel nano-masking technique based on porous alumina membrane as mask was developed for preparing ZnO nanodots on Si substrate. The as-deposited nanodots with uniform size were in two-dimensional, regular array, whose regular structure and diameter were closely related to the mask used. Photoluminescence results show that the ZnO nanodot array have a strong UV light emission peak around 380 nm and a wide blue-green light emission peak at 460~610 nm at room temperature. The former corresponds to the near band edge emission of the wide band-gap ZnO and the latter could be attributed to the recombination of a photogenerated hole with singly ionized oxygen vacancy.更多还原