【摘要】 采用SiCl4/H2 混合气源的等离子体化学气相沉积技术 ,在 30 0℃的玻璃衬底上低温制备出多晶硅薄膜 ,沉积速率大于 3 /s,晶化率达到 60 %.实验中发现氢稀释对膜的生长及晶化起重要的促进作用 ,薄膜晶化率随射频功率增大呈不断下降的趋势 .通过与SiH4/H2沉积结果的对比 ,从基团成份、基团尺寸以及表面反应过程几个方面 ,对晶化硅薄膜低温生长的机制进行初步的探讨更多还原

【Abstract】 The crystalline silicon films on glass have been obtained under the substrate temperature of 300℃ using SiCl 4/H 2 mixture gases in a conventional radio frequency glow discharge plasma chemical vapor over deposition system.The deposition rate was 3?/s and the crystallinity of the film was 60%.In our experiment,we found that the dilution of H 2 was critical to this deposition technology,and the crystallinity gradually decreased while rf.power increased.Comparing with the results in SiH 4/H 2_PECVD,we hereby discussed the low_temperature growth kinetics of crystalline_silicon film in SiCl 4/H 2_PECVD from the aspect of precursor component, precursor size and the bonding on growing surface.更多还原