【摘要】 采用自行研制的超高真空化学气相淀积(UHV/CVD)设备,研究了在550°C下SiO2薄膜上多晶SiGe成核时间和生长速率与GeH4和B2H6流量的关系,以及不同温度下快速热退火对多晶SiGe电阻率的影响。实验结果表明,多晶SiGe成核时间随GeH4流量的增加而增加;在小的GeH4流量下,其生长速率随GeH4和B2H6流量的增加而增加,但比同等条件下单晶SiGe生长速率低;其电阻率随GeH4流量的增加而下降,随快速热退火温度的升高而下降。更多还原

【Abstract】 Poly-SiGe films are grown on SiO₂ at 550 °C using a self-developed UHV/CVD system.The relationship of incubation time and growth rate with GeH₄ and B₂H₆ flow rate are studied, together with effects of the rapid thermal annealing on the poly-SiGe resistivity under different temperatures.Experimental results show that the incubation time of poly-SiGe increases with GeH₄ flux, and the growth rate increases with GeH₄ and B₂H₆ flux for small GeH₄ flux, but lower than the single crystalline SiGe film.The resistivity of poly-SiGe decreases with increasing GeH₄ flux and RTA time.更多还原