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界面粗糙度对Co/Cu/Co/NiO自旋阀磁电阻的影响

Effect of interfacial roughness on magnetoresistance of Co/Cu/Co/NiO spin valve

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【作者】 张爱梅吴小山孙亮蔡宏灵杜军胡安蒋树声谭伟石黄军平罗广圣陈中军陈兴孙民华吴忠华

【Author】 ZHANG Aimei WU Xiaoshan SUN Liang CAIHongling DUJun HU An JIANG Shusheng(Lab of Solid State Microstructures, Center for Advanced Studies in Science and Technology of Microstructures, Department of Physics, Nanjing University,Nanjing 210093)TAN Weishi(Department of Applied Physics and Materials Chemistry Laboratory, Nanjing University of Science and Technology, Nanjing 210094)HUANG Junping LUO Guangsheng(School of Materials Science and Engineering, Nanchang University, Nanchang 330047)CHEN Zhongjun CHEN Xing SUN Minhua WU Zhonghua(BSRF, Institute of High Energy Physics, the Chinese Academy of Sciences, Beijing 100039)

【机构】 南京大学固体微结构物理国家重点实验室微结构物理高等科学技术中心南京大学物理系南京理工大学理学院应用物理系南昌大学材料科学与工程学院中国科学院高能物理研究所同步辐射实验室中国科学院高能物理研究所同步辐射实验室 南京 21009南京 21009南京 210094南昌 330047北京 100039北京 100039

【摘要】 用磁控溅射方法制备了一系列含NiO反铁磁层的Co/Cu/Co自旋阀结构。电磁输运测量表明,对相同Co/Cu/Co结构的自旋阀,NiO在自旋阀的顶部(TSV)和在自旋阀的底部(BSV)表现了不同的磁电阻值和热稳定特性。X射线镜面反射和横向漫散射测量证明小的界面粗糙度是导致磁电阻增大的主要原因,而Co与NiO层间的耦合减弱将导致MR减小,两者共同的作用决定了含NiO的自旋阀的磁电阻。我们由此设计实验将:BSV自旋阀的磁电阻值提高近1倍,即达到-12%,而对称自旋阀的磁电阻则提高到15%。

【Abstract】 By magnetosputting technique, we have fabricated a series of NiO-containing Co/Cu/Co spin valves. Electromagnetic transport measurements show that the thermal stability behavior for NiO being on the top of the spin valve (TSV) is different from that for NiO being under the bottom of the spin valve (BSV). X-ray reflectivity and X-ray transverse diffuse scattering studies show that the interface roughness and the coupling between NiO layer and Co layer are two competitive factors in determining the MR effect of the NiO containing Co/Cu/Co spin valves. From this point of view, we have designed another sets of samples with varying growth parameters and the MRs reach to a nearly double value, i.e., -12% for BSV. The MR of symmetric spin valve is increased to 15%.

【基金】 国家自然科学基金资助项目(No.10174030,90201039);国家重大基础研究973项目(001CB610602)
  • 【文献出处】 核技术 ,Nuclear Techniques , 编辑部邮箱 ,2004年07期
  • 【分类号】O482.5
  • 【被引频次】3
  • 【下载频次】149
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