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界面粗糙度对Co/Cu/Co/NiO自旋阀磁电阻的影响
Effect of interfacial roughness on magnetoresistance of Co/Cu/Co/NiO spin valve
【摘要】 用磁控溅射方法制备了一系列含NiO反铁磁层的Co/Cu/Co自旋阀结构。电磁输运测量表明,对相同Co/Cu/Co结构的自旋阀,NiO在自旋阀的顶部(TSV)和在自旋阀的底部(BSV)表现了不同的磁电阻值和热稳定特性。X射线镜面反射和横向漫散射测量证明小的界面粗糙度是导致磁电阻增大的主要原因,而Co与NiO层间的耦合减弱将导致MR减小,两者共同的作用决定了含NiO的自旋阀的磁电阻。我们由此设计实验将:BSV自旋阀的磁电阻值提高近1倍,即达到-12%,而对称自旋阀的磁电阻则提高到15%。
【Abstract】 By magnetosputting technique, we have fabricated a series of NiO-containing Co/Cu/Co spin valves. Electromagnetic transport measurements show that the thermal stability behavior for NiO being on the top of the spin valve (TSV) is different from that for NiO being under the bottom of the spin valve (BSV). X-ray reflectivity and X-ray transverse diffuse scattering studies show that the interface roughness and the coupling between NiO layer and Co layer are two competitive factors in determining the MR effect of the NiO containing Co/Cu/Co spin valves. From this point of view, we have designed another sets of samples with varying growth parameters and the MRs reach to a nearly double value, i.e., -12% for BSV. The MR of symmetric spin valve is increased to 15%.
【Key words】 Ni-based spin valve; X-ray specular reflectivity and scattering; Interface roughness;
- 【文献出处】 核技术 ,Nuclear Techniques , 编辑部邮箱 ,2004年07期
- 【分类号】O482.5
- 【被引频次】3
- 【下载频次】149