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Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

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【作者】 王勇刚； 马骁宇； 钟斌； 王德松； 张秋琳； 冯宝华；

【Author】 Yonggang Wang , Xiaoyu Ma , Bin Zhong Desong Wang , Qiulin Zhang , and Baohua Feng Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 Institute of Physics, Chinese Academy of Sciences, Beijing 100080

【机构】 Institute of Semiconductors； Chinese Academy of Sciences； Beijing 100083； Institute of Physics； Beijing 100080； Beijing 100080；

【摘要】 <正> We reported a passive Q-switched diode laser pumped Yb: YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As+ in the concentration of 1016 ions/cm2. To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

【Abstract】 We reported a passive Q-switched diode laser pumped Yb: YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As+ in the concentration of 1016 ions/cm2. To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500℃ for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and high reflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

【关键词】 implanted； pumped； wafer； coated； absorber； switching； insulating； switched； minutes； annealed；
  • 【文献出处】 Chinese Optics Letters ,中国光学快报(英文版) , 编辑部邮箱 ,2004年01期
  • 【分类号】O432.12
  • 【被引频次】4
  • 【下载频次】54
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