【摘要】 用电子束蒸发技术制备非晶硅薄膜,不同剂量Co离子注入后真空退火改性。X射线衍射法分析了样品的物相变化特征,发现Co离子注入可诱导非晶硅结晶,有一优化注入剂量5×1016ions/cm-2,使晶化Si(111)峰最强。还测量了非晶硅薄膜电阻率,揭示薄膜电阻温度系数随Co离子掺杂浓度和退火温度改变的规律;在退火温度500℃,离子注入量5×1015ions/cm-2条件下,获得TCR系数高达-2.5%的薄膜材料。更多还原

【Abstract】 a-Si thin films were prepared by electron-beam-evaporated .We improved them by ion implantation then annealing. the films were characterized by X-ray diffraction. It is found that crystallization of amorphous silicon induced by ion implantation has a optimized dose of 5×10¹⁶ions/cm^-2, the best annealing temperature with different implanted dose is different. The temperature coefficient of resistance （TCR） has changed with implanted dose from 5×10¹⁵ions/cm^-2 to 1×10¹⁷ions/cm^-2 and annealing temperature from 300℃ to 500℃. We attained a optimum TCR -2.5% for the samples implanted Co dose of 5×10¹⁵ions/cm^-2 and annealing at 500℃.更多还原