【摘要】 为了研究铈,钇离子注入对纯锆耐蚀性的影响,纯锆样品用MEVVA源以40kV注入11016ions/cm2至11017ions/cm2剂量的钇和铈,注入最高温度约为150℃。用X光电子谱仪(XPS)分析注入表层元素的价态;在1mol/L硫酸溶液中3次极化测量来研究注入样品的耐蚀性。对于钇离子注入,当注入剂量大于5×1016ions/cm2时,注入样品的耐蚀性显著提高。用掠角X射线衍射(GAXRD)研究氧化膜中由于铈离子注入发生的相转移。三次极化测量表明注铈样品与空白样品相比,耐蚀性下降许多。最后分别对注入钇和铈样品的腐蚀行为机理进行了探讨。更多还原

【Abstract】 In order to study the influences of ion implantation on the aqueous corrosion behavior of zirconium, specimens were implanted by yttrium and cerium ions with a fluence range from 11016 to 11017 ions/cm2 at about 150℃, using MEVVA source at an extracted voltage of 40 kV. The valence of the surface layer was analyzed by X-ray photoelectron spectroscopy (XPS), three-sweep potentiodynamic polarization measurement was used to investigate the aqueous corrosion resistance of zirconium in a 1 mol/L H2SO4 solution. It is found that a significant improvement can be achieved in the aqueous corrosion behavior of zirconium compared with that of the as-received zirconium, when implanted yttrium ions fluence is more than 5×1016 ions/cm2. Glancing angle X-ray diffraction (GAXRD) was used to examine the phase transformation due to the cerium ion implantation in the oxide films. It was found that a remarkable decline in the aqueous corrosion behavior of zirconium implanted with cerium ions compared with that of the as-received zirconium. Finally, the mechanisms of the corrosion resistance behavior of the yttrium and cerium implanted zirconium are discussed respectively.更多还原