【摘要】 用氨化溅射Ga2O3薄膜的方法,成功地合成了一维GaN纳米线。用X射线衍射仪(XRD)、扫描电镜(SEM)、透射电镜(TEM)和高分辨电镜(HRTEM)对样品进行了分析。生成的GaN纳米线平直光滑,其直径为20 nm~90 nm,长可达50 祄;纳米线为高质量的单晶六方纤锌矿GaN,沿[110]方向生长。用此工艺制备GaN纳米线,避免了在制备过程中引入杂质,合成的纳米线纯度较高。更多还原

【Abstract】 A high-quality gallium nitride nanowire were synthesized through ammoniating Ga2O3 thin films deposited by rf magnetron sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) were used to characterize the composition, morphology and structures of the samples. The formed straight and smooth GaN nanowires had diameters of 20 nm~90 nm and lengths up to 50 祄. The nanowires are high quality GaN single crystal with the hexagonal wurtzite and possess the growth direction of [110]. This is a simple and novel technique fabricating high quality GaN nanowires without the assistance of a template or catalyst.更多还原