【摘要】 介绍了多晶硅、单晶硅的同步外延 .采用两步外延工艺 ,研究了硅烷流量、外延时间以及外延温度对外延质量参数 α的影响 .硅烷流量大、初始诱生时间短 ,则单晶硅条宽 ,多晶硅横向蔓延弱 ,但外延层质量可能较差 .较优的条件是 :硅烷诱生生长流量为 13.1～ 17.5 sccm,正常生长流量为 7.0～ 7.88sccm,初始诱生时间为 30～ 5 0 s.温度影响较复杂 ,当温度低于 980℃时 ,单晶硅条宽随温度增加而增加 ,在 980℃附近达到最大 ,随后随温度增加单晶条宽降低更多还原

【Abstract】 Synchro-epitaxy is introduced and a “two periods epitaxy” process is proposed.The influence of the flows of SiH 4 N 1,N 2,deposition time t 1,t 2,and epitaxial temperature T on epilayer quality (embodied by α) is reported.The shorter initial inducing time t 1 and larger flows of SiH 4 are,the wider single crystal strips are.But the quality of epilayer may be poor.The optimum conditions are:N 1=13.1～17.5sccm,N 2=7.0～7.88sccm,and t 1=30～50s.The influence of temperature is complex:when T is lower than 980℃,single crystal strips increase with T ;when T is higher than 980℃,single crystal strips decrease with T.It reaches maximum near 980℃.更多还原