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T形结构在位测量薄膜中残余张应力的理论研究

Study of In Situ Measurement of Residual Tensile Stress in Thin Films for T-Shaped Microstructures

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【作者】 徐方迁; 徐联; 何世堂;

【Author】 Xu Fangqian 1,2 ,Xu Lian 1 and He Shitang 1(1 Institute of Acoustics,The Chinese Academy of Sciences,Beijing 100080,China) (2 Department of Electronics and Information,North China Institute of Science Technology,Beijing 101601,China)

【机构】 中国科学院声学研究所; 中国科学院声学研究所 北京100080; 华北科技学院电子信息工程系; 北京101601; 北京100080; 北京100080;

【摘要】 给出了考虑梁的轴向载荷情况下理论计算公式的推导过程 ,在变形较大时两种公式计算结果最大相差9.6 5 % .用 L PCVD技术制作了几种大小不同的 T形梁结构 ,给出了残余张应力与杨氏模量比值 .

【Abstract】 For the in situ measurement of mechanical properties of films with residual tensile stress,the method of the T shaped structures is developed.When δ ,center deflection of the fixed end beam,is less than 30% of h ,beam thickness,the center deflection can be found by the theory of small deflection and the axial load of the fixed end beam may be neglected.When δ is larger than 30% of h ,the axial load of the fixed end beam must be considered,and the previously formula is not suitable for this case.The detailed theoretical deduction of the formula for the latter case is contained in this paper.The maximum discrepancy of the two calculated results by the two different formulae is 9 65% and several different T shaped structures are fabricated by LPCVD and their ratios of the residual stress to Young’s modulus are given.

【关键词】 应力; 膜; 变形;
【Key words】 stress; film; flection;
【基金】 中国科学院知识创新工程方向性项目(编号:KGCS2 -10 2 )~~
  • 【文献出处】 半导体学报 ,Chinese Journal of Semiconductors , 编辑部邮箱 ,2004年05期
  • 【分类号】TN304.07
  • 【被引频次】2
  • 【下载频次】71
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