【摘要】 综述了近10年来国内外在半导体硅片金属微观污染研究领域的进展。研究了单金属特别是铜的沉积、形成机理和动力学以及采用的研究方法和分析测试手段,包括对电化学参数和物理参数等研究。指出了随着科学技术的不断发展,金属污染金属检测手段也得到了丰富,为金属微观污染的研究提供了有力的工具。更多还原

【Abstract】 Research progresses in recent 10 years in metallic microcontamnation of silicon wafer during wet cleaning are briefly reviewed. Significant research works have been focused on single metal, in particular copper deposition and its mechanism and kinetics, including electrochemical pa- rameter and physical parameter measurements. With the rapid development in scientific technology, various monitoring tools for metal contamination become more reliable and easily operated, which will provide more powerful research tools for the future study in metallic microcontamination on silicon wafer.更多还原