【摘要】 铜的化学机械抛光(Cu-CMP)技术是ULSI多层金属布线结构制备中不可缺少的平坦化工艺。Cu-CMP后硅片表面的蝶形、侵蚀等平坦性缺陷将降低铜线的最终厚度和增大电阻率,从而降低器件性能和可靠性。而且可能进一步影响硅片的面内非均匀性(WIWUN),在多层布线中导致图案转移的不准确。本文介绍了对Cu-CMP平坦性的仿真、模拟和实验研究,并着重分析了碟形、侵蚀和WIWUN与抛光液、线宽和图案密度、抛光速度和载荷等相关参数的关系。更多还原

【Abstract】 The chemical-mechanical polishing of copper (Cu-CMP) is considered as an indispens-able planarization technology for the multi-layer interconnection fabrication in the ULSI. The sur-face defects such as dishing, erosion can reduce the thickness of copper interconnection and en-large electrical resistance, reduce both the performance and the reliability of device, further influ-ence WIWUN which cause imprecise pattern transfer in the multi-layer interconnect. In this paper,the module, simulation research and experimental investigations on the planarity of Cu-CMP areintroduced, and the influencing of CMP parameters, such as slurry, line width, pattern density,velocity of polishing and load, to erosion,dishing and WIWNU are emphatically analyzed.更多还原