【摘要】 研究了陶瓷衬底上多晶硅薄膜的生长和区熔再结晶。利用快速热化学气相沉积（RTCVD）方法,在低成本的Al₂O₃衬底上沉积了重掺杂的致密多晶硅薄膜,薄膜的晶粒尺寸在微米级。经区熔再结晶（ZMR）后,薄膜的晶粒尺寸有了较大的提高,而且迁移率较高,这样的薄膜可以用作晶体硅薄膜太阳电池的籽晶层。最大的晶粒达到毫米量级,空穴迁移率超过50cm²·V^-1·s^-1。在籽晶层上外延的活性层形貌与此类似。这些结果显示这种薄膜在光伏应用方面有较大的潜力。更多还原

【Abstract】 In this paper, growth and recrystallization of silicon films on ceramic substrates were studied. Heavily doped polycrystalline silicon thin films were deposited on low cost Al2O3 by thermal rapid chemical vapor deposition (RTCVD) . Compact and uniform films with grain size in the order of some micrometers were fabricated. By means of zone melting recrystallization (ZMR) method, polycrystalline silicon thin films with large grains and relative high carrier mobility were obtained, which could act as a seeding layer. The maximum grain of these films was about one millimeter in width and some millimeters in length, and hole mobility exceeded 50 cm · V -1 · s-1 . Active silicon films deposited on these seeding layers showed the same morphologies. These results showed that these films have great potential for photovoltaic applications.更多还原