【摘要】 研究了室温条件下CoCl2＿Pr(CH3SO3)3＿TBAP(高氯酸四丁基铵)＿DMSO(二甲基亚砜)体系中的Pr＿Co在铜电极上的共沉积,选定一系列的阴极电位进行恒电位电解,制备出w(Pr)=38%～42%的Pr＿Co合金膜。向DMSO中添加4 0mol·L-1尿素,发现混合体系的熔点从18 54℃下降至5 35℃,电导率上升,电沉积效果明显提高。通过EDAX分析了合金膜的组成及形态,发现在添加尿素体系中制备出来的Pr＿Co合金膜的表面更光滑致密,膜中w(Pr)在18%～23%之间。更多还原

【Abstract】 The codeposition of Pr_Co on a Cu electrode was investigated in CoCl2_\{Pr(CH3SO3)3\}_TBAP_DMSO system at room temperature. Potentiostatic elec trolysis was used to prepare films of various Pr contents (38%～42%).It was found that the addition of urea in DMSO(40 mol/L) decreased the molting point of t he system from 1854 ℃ to 535 ℃ and increased its electroconductivity. Analysi s by EDAX indicates that the urea_added system can obtain more smooth and strong er adhering films(w(Pr)=18%～23%) on Cu substrate.更多还原