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硅衬底硫化锌薄膜发光器件的研制

Fabrication of the ZnS Thin Film Electroluminescence Devices on Silicon Substrate

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【作者】 陈松岩曾明刚王水菊陈谋智蔡加法林爱清邓彩玲

【Author】 CHEN Songyan1,ZENG Minggang1,WANG Shuiju2,CHEN Mouzhi1, CAI Jiafa1,LIN Aiqing1, DENG Cailing1(1.Dept. of Phys.Xiamen Univ., 2.Analysis and Testing Center, Xiamen Univ., Xiamen 361005, China)

【机构】 厦门大学物理学系厦门大学分析和测试中心厦门大学物理学系 福建厦门361005福建厦门361005福建厦门361005

【摘要】 用双舟热蒸发技术在硅衬底上制备硫化锌电致发光薄膜,用XRD、XPS技术和电致发光谱分析技术,研究该薄膜的微结构与发光特性.发现硅衬底上硫化锌薄膜与硫化锌粉末在晶体结构上存在差异,掺入的稀土元素铒呈三价,电致发光谱为Er3+的发光谱线,硅衬底硫化锌发光薄膜器件可与硅器件工艺兼容.

【Abstract】 ZnS electroluminescence films were deposited onto singlecrystal silicon substrates by thermal evaporation technique with two evaporation boats .The microstructure and properties of the ZnS film were investigated by Xray diffraction technique (XRD),Xray photoemission spectroscopy (XPS) and electroluminescence spectroscopy. It was found that the crystal structure of the ZnS film on silicon substrate was different from the ZnS powder. The doped Er element existed as Er3+ state, and the electroluminescence spectrum comes from Er3+ in the film. The advantage of ZnS film electroluminescence device on silicon substrate is compatible with silicon microelectronic technology.

【关键词】 硅衬底硫化锌薄膜
【Key words】 silicon substrateszinc sulfide films
【基金】 福建省自然科学基金(A0110006);厦门大学自选课题基金(Y07007)资助
  • 【文献出处】 厦门大学学报(自然科学版) ,Journal of Xiamen University(Natural Science) , 编辑部邮箱 ,2003年06期
  • 【分类号】TN383
  • 【被引频次】13
  • 【下载频次】239
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