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雪崩半导体方程的整体弱解及其整体吸引子
Global Week Solution and Global Attractor of Semiconductor Equation with Avalanche Generation
【摘要】 研究半导体具雪崩效应模型的混合初边值问题.在初值时,证明了整体弱解的存在性,并证明存在一个整体吸引子.
【Abstract】 The problems of initial value for semiconductor equation with avalanche generation mixed initial boundar were studied and the existence of global week solution and the global attractor were proved at the state of the initial value.
【关键词】 半导体方程;
混合边值;
整体吸引子;
【Key words】 semiconductor equation; mixed boundary value, global attractor;
【Key words】 semiconductor equation; mixed boundary value, global attractor;
【基金】 天津市高校科技发展基金资助项目(2001yy10)
- 【文献出处】 天津师范大学学报(自然科学版) ,Journal of Tianjin Normal University (Natural Science Edition) , 编辑部邮箱 ,2003年01期
- 【分类号】O175
- 【下载频次】25