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激光诱导制备纳米SiC粉体

Synthesis of nano SiC powder by laser induced gas phase reaction

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【作者】 线全刚梁勇杨柯王淑兰

【Author】 XIAN Quangang, LIANG Yong, YANG Ke, WANG Shulan(Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, China)

【机构】 中国科学院金属研究所中国科学院金属研究所 辽宁沈阳110016辽宁沈阳110016辽宁沈阳110016

【摘要】 以硅烷SiH4和乙炔C2H2为反应原料,采用激光诱导化学气相沉积制各(LICVD)理想纳米SiC粉体.用化学分析、X射线衍射(XRD)、透射电子显微镜(TEM)及比表面积(BET)等分析测试手段对粉体进行了表征,结果表明粉体中SiC含量高于98%,平均粒径为20nm,晶体结构为β SiC,粉体产率大于200g/h,粉体中含氧量低于1%.

【Abstract】 In this paper,ideal nanometer SiC powder was synthesized by laser Induced Chemical Vapor Deposition (LCVD) with SiH\-4+C\-2H\-2 as starting materials.The powder produced was characterized by chemical analysis,XRD,TEM and BET techniques.The results showed that the powder of β-SiC crystallizatiod had a purity of above 98% of SiC in weight with average diameter of 20?nm and less than 1% oxygen content in weight that was mainly absorbed at the surface of the powder.

【关键词】 激光制备纳米碳化硅
【Key words】 lasersynthesisnanometerSiC
  • 【文献出处】 沈阳工业大学学报 ,Journal of Shenyang University of Technology , 编辑部邮箱 ,2003年02期
  • 【分类号】TB383
  • 【被引频次】15
  • 【下载频次】239
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