【摘要】 随着半导体材料及工艺水平的迅速发展,Si1-x-yGexCy合金材料在近年内受到了广泛重视。C组分的引入所带来的应变补偿作用,很好地解决了Si1-xGex合金中的晶格失配问题,使Si衬底上生长的外延层质量和厚度都得到相应提高,并且由于C组分所带来的能带补偿作用,使材料的光电特性也得到改进。文章综述了Si1-x-yGexCy合金的研究进展及其物理特性,并对其在FET、HBT、光电子器件等方面的应用进行了详细的阐述。更多还原

【Abstract】 With the rapid development of semiconductor material and technology, more and more attention has been paid to Si1xyGexCy alloy system (grown on Si substrate) in recent years The addition of carbon into the SiGe system yields Si1xyGexCy alloy, in which Ge and C composites can be adjusted to give a latticematched combination with silicon, so that thicker epitaxial layers with better quality can be grown on Si substrate Si1xyGexCy alloys also offer the possibility of obtaining higher band offsets than those attained in Si1xGex alloys, thereby photoemission of the material can be improved An overview of the research and development of Si1xyGexCy alloys is reviewed in this paper The characteristics of strain compensation effect are examined Finally, applications of the material to FET’s, HBT’s and optoelectronic devices are discussed更多还原