【摘要】 用磁控溅射疗法在Al2O3基片上沉积Au/NiCr/Ta多层金属膜,通过X射线衍射技术研究退火前后溥膜晶体取向的变化, Auger电子能谱分析退火前后薄膜沿深度方向的元素分布,四点探针测试退火前后薄膜表面电阻率.结果表明:退火后111Au与200Au衍射强度褶对比值减小;薄膜表面电阻率异常增大;退火温度越高,薄膜表面电阻率越大,分析认为主要是由于Ni,Cr元素向金膜表层扩散导致薄膜表面电阻率异常增大更多还原

【Abstract】 Au/NiCr/Ta multilayer was deposited on Al2O3 substrate by magnetron sputtering technology. The crystal orientation, resistivity, and element distribution in films were examined by X-ray diffraction (XRD), four-point probe technology and Auger electron spectroscopy (AES). It is observed that the 200Au diffraction intensity increases and an abnormal increase of the film resistivity occurs with increasing annealing temperature from 300 ℃ to 500℃, in addition, the resistivity also increases with increasing deposition temperature, which can be explained by the diffusion of Ni and Cr elements into Au film surface layer.更多还原