【摘要】 研究了以羰基镍为沉积源 ,利用MOCVD技术沉积镍薄膜 ;讨论了沉积温度及压力对沉积速率的影响 ,以及利用SEM、XRD、DSC等分析手段来探讨沉积温度及不同沉积基体对薄膜微观形态的影响。结果表明 ,沉积温度约为 1 50℃可以得到较快的沉积速率 ,而且薄膜连续具有金属光泽 ;以铜为沉积基体所得到的薄膜其微观形态中有明显的晶粒 ,以玻璃为基体得到的薄膜却含有部分非晶态的组织 ;沉积速率随着反应室工作压力的增加而下降。更多还原

【Abstract】 Films of nickel are deposited by MOCVD technique from precursor Ni(CO) 4. The factors that influenced the deposition rate of nickel films, such as deposition temperature and pressure, are discussed in the paper.The microstructure and morphologies of the films are examined by means of X ray diffraction(XRD),differential scanning calorimeter(DSC),scanning electron microscope (SEM).The microstructure and morphologies of the films changed with the experimental parameters,such as deposition temperature and deposition substrates. As a result,the better microstructured film and the rapid deposition rate are attained when the deposition temperature is about 150℃. The visible crystals is found on copper substrate, otherwise, the part amorphous film can be obtained on glass substrate. The deposition rate is dropped as pressure in the reaction chamber is increased.更多还原