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Nd∶YAG晶体生长过程中Nd3+浓度场的数值模拟

Numerical Simulation Study on Field of Nd3+ Concentration during the Growth of Nd∶YAG Crystal

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【作者】 苏伟钟景昌张丽波岑学员李林赵英杰

【Author】 SU Wei 1,2 , ZHONG Jing chang 2, ZHANG Li bo 3, CEN Xue yuan 4, LI Lin 2, ZHAO Ying jie 2 1College of Computer Science and Technology, 2National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China 3R & D Center of China FAW Group Corporation, Changchun, Jilin 130011, Chia 4Center of Optoelectronic Materials, Guangzhou Institute of Semiconductor Materials, Guangzhou, Guangdong 510610, China

【机构】 长春理工大学计算机科学与技术学院长春理工大学高功率半导体激光国家重点实验室中国第一汽车集团公司技术中心广州市半导体材料研究所光电子材料中心长春理工大学高功率半导体激光国家重点实验室 吉林长春130022长春理工大学高功率半导体激光国家重点实验室吉林长春130022吉林长春130011广东广州510610吉林长春130022

【摘要】 采用有限差分法 (FDM)对使用Cz(Czochralski)法生长Nd∶YAG激光晶体过程中熔体内和晶体内Nd3+ 浓度场进行数值模拟研究。首先给出了Nd∶YAG晶体生长系统的数学模型 ,然后对上述数学模型进行无量纲化处理 ,最后给出相应的边界条件 ,使用有限差分法求解上述方程。应用上述方法编制仿真程序 ,仿真了改变工艺条件后熔体内和晶体内Nd3+ 浓度场的变化情况 ,分析了各种工艺条件对上述场量变化的影响。

【Abstract】 A numerical simulation study on the field of Nd 3+ concentration in the melt and the crystal by using FDM (finite differential method) during the growth of Nd∶YAG crystal by Cz (Czochralski) method was reported. At first, the mathematical model of the growth of Nd∶YAG crystal was given, then the equations with no dimensions were given. Finally, the boundary condition was given and the equations were solved by FDM. The simulation program was given by above method, and then the change of the field of the Nd 3+ concentration in the melt and the crystal was described by simulation program. The effect of processing conditions on the above field in the melt was analyzed.

  • 【文献出处】 中国激光 ,Chinese Journal of Lasers , 编辑部邮箱 ,2003年05期
  • 【分类号】O782.5
  • 【被引频次】1
  • 【下载频次】124
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