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半导体紫外探测器技术进展
Development of Semiconductor Ultraviolet Detectors
【摘要】 介绍了几种新型半导体紫外探测器。列出了这类探测器的各项用途及优点,并对其结构,制作方法以及性能作出了简要说明。N化物半导体紫外探测器具有探测波长范围可调,可靠性好等优点,可以认为是半导体紫外探测器发展的主要方向。
【Abstract】 A introduction of several new type semiconductor ultraviolet detectors is made. The advantage and usage of the detectors are listed, and the configuration, fabrication and characterization of the detectors are described. The group Ⅲ-nitride semiconductor ultraviolet detectors have several advantages such as the detected wavelength modulation and high reliability, and are thought the main directions of semiconductor ultraviolet detectors.
【关键词】 紫外探测器;
AlGaN探测器;
光电二极管;
金属-半导体探测器;
【Key words】 ultraviolet detector; AlGaN detector; photoelectric diode; M-S detector;
【Key words】 ultraviolet detector; AlGaN detector; photoelectric diode; M-S detector;
- 【文献出处】 激光与红外 ,Laser & Infrared , 编辑部邮箱 ,2003年02期
- 【分类号】TN23
- 【被引频次】16
- 【下载频次】577