【摘要】 对具超强汞富集能力的基因工程菌在重金属汞离子存在的水体中的生长状况进行了研究。实验所采用的基因工程菌由于外源基因的表达而对Hg2 + 产生了一定的耐受力 ,而且这种耐受力经IPTG诱导后还能得到进一步的增强 ,耐受能力从Hg2 + 浓度 5mg/L提高到 15mg/L。IPTG加入的时机对菌体的生长和耐受力的有效诱导是重要的。一般在OD6 0 0 为 0 .5～ 0 .8时加入 ,且加入后还应保证 2h左右的诱导时间。实验结果还表明菌体在生长过程中对碳源的要求很低。更多还原

【Abstract】 The growth situations of recombinant E.coli JM109 which can superaccumulate Hg 2+ from aqueous solution containing Hg 2+ were studied. The Hg 2+ resistance ability of the recombinant bacteria was observed due to the expression of exogenous genes, and the ability could be further improved from 5mg/L of Hg 2+ concentration to 15mg/L by means of IPTG induction. The suitable time to add IPTG was important for bacteria growth. Basically IPTG was supposed to be added as OD 600 reached 0.5～0.8. Furthermore, at least 2 hours of induction period of time was needed to ensure the effective induction of Hg 2+ resistance. The experiment results also showed that the recombinant bacteria could grow at a very low concentration level of carbon source.更多还原