【摘要】 以乙酰丙酮铂为沉积源物质 ,采用金属有机化合物化学气相沉积 (MOCVD )法在Mo基体上制备了Pt薄膜。研究了Pt薄膜的沉积速率与基体温度、乙酰丙酮铂的加热温度和运载气体 (氩气 )流速等沉积参数的关系。Pt的沉积速率与沉积温度之间的关系不符合Arrhenius方程 :沉积速率与绝对温度的倒数呈现抛物线关系 ,当温度为 5 5 0℃时 ,Pt的沉积速率达到最大值 ;随着乙酰丙酮铂加热温度的升高 ,Pt的沉积速率直线增加 ;而氩气流速的增大则显著减少Pt的沉积速率。SEM波谱成分分析表明 ,Pt薄膜中含有少量的氧。更多还原

【Abstract】 Pt films were prepared by MOCVD using platinum-acetylacetonate precursors on molybdenum substrates.The effects of substrate temperature,precursor temperature and flow of argon on deposition rates of platinum were determined.The relationship between the deposition rate and the substrate temperature was a parabola relation and not accord with Arrhenius formula.The deposition rate of platinum reached maximum at 550℃.The deposition rate increased linearly with the rising of temperature of platinum-acetylacetonate,whereas decreased obviously with increasing flow of argon.Small amount of oxygen was determined by SEM.更多还原