【摘要】 在微波等离子体化学气相沉积装置中 ,采用正交试验法研究金刚石在镜面抛光的Si( 1 0 0 )面上的偏压形核过程中 ,形核时间、偏压电压、气压及甲烷浓度对形核密度的影响 ,研究结果表明 :形核密度随形核时间的增加而增加 ,适中的偏压电压和沉积气压有利于金刚石的形核 ,而甲烷浓度的影响很小。正交试验所得的最佳形核条件为偏压 -1 5 0V ;时间 1 2min ;气压 4kPa;CH4 比率 5 % ,在该条件下金刚石的形核密度达到 1 0 1 0 个 cm2 。更多还原

【Abstract】 The bias enhanced nucleation of diamond on mirrorpolish Si(100) has been studied by using orthogonal method in a microwave plasma chemical vapor deposition (MPCVD) reactor. The effects of process parameters such as bias voltage, methane content, bias time and gas pressure on diamond nucleation are investigated. The results show that the diamond nucleation density increases in direct ratio with the nucleation time. The moderate bias voltage and gas pressure are beneficial to diamond nucleation while the effect of the methane concentration on the nucleation is negligible. The optimum nucleation condition obtained from orthogonal test is bias voltage -250V, nucleation time 12min, gas pressure 4kPa and methane concentration 4% under which a very high nucleation density up to 10 10 /cm 2 has been achieved.更多还原