【摘要】 研制了一种新模式的半导体场效应晶体管——垂直沟道的偶载场效应晶体管(VDCFET) ,这种结构可以避免现有光刻技术的制约 ,使用常规的半导体双极晶体管工艺 ,既可把有效沟道长度减短 ,大大提高器件的速度 ,又可将电源电压降低到小于 1 V,大幅度降低功耗 ,改进其电学性能 .本器件可应用于高频电路、D触发器、环振电路及反相器等重要电路 .从纵向和横向报道了器件的设计思想 ,并给出了器件特性的测量结果 .更多还原

【Abstract】 A new mode of field effect transistors is studied. Which is na med vertical dual carrier field effect transistor (VDCFET). This structure can a void the limit of photolithography, and make the normal semiconductor technique s be enough. Effective channel length is reduced to improve the speed of the dev ice. Operating voltage is reduced to lower than one volt to reduce device consum ption and to improve electric characteristics of the device. VDCFET can be appli ed to many fields such as high frequency, D triggers, ring oscillations, inverto rs, flip-flops and so on. The thought of design and the property of the device are reported.更多还原