【摘要】 发现PECVD生长的系列掺杂氢化纳米硅 (nc Si:H)薄膜中纳米硅晶粒 (nc Si)有择优生长的趋势 .用Raman、XRD、AFM、HRTEM等方法研究其微观结构时发现 :掺磷的nc Si:H薄膜XRD峰位的二倍衍射角约为 33°.掺硼nc Si:H薄膜的XRD峰位的二倍衍射角约为 47°.用自由能密度与序参量的关系结合实验参数分析得到 :较高的衬底温度引起序参量改变 ,使掺磷nc Si:H薄膜中nc Si的晶面择优生长 .适当的电场作用引起序参量改变 ,导致掺硼nc Si:H薄膜在一定的自由能密度范围内nc Si的晶面择优生长更多还原

【Abstract】 The preferred growth of nanosized crystal silicon (nc Si) in doped hydrogenated nanocrystalline silicon (nc Si:H) films which were prepared using plasma enhanced chemical vapor deposition (PECVD) system by RF(13.56?MHz) and DC bias stimulating was found. Its microstructure was investigated using X ray diffraction (XRD), Raman spectrum meter, atomic force microscope (AFM) and high resolution transmission electronic microscope (HRTEM). Nc Si about 10 nm was distributed in the silicon hydrogen amorphous networks in the films. The peaks of XRD spectra of phosphorus doped nc Si:H films was at 2 θ ≈33°, the exponent of crystalline plane was (130). The peaks of XRD spectra of boron doped nc Si:H films was at 2 θ ≈47°, the exponent of crystalline plane was (220), respectively. The considerable reasons were investigated. The relation between size of nc Si, crystalline volume fraction and depositing parameters were studied.更多还原