【摘要】 利用 MOCVD(metalorganic chemical vapor deposition)和 APCVD(atmosphere chemical vapor deposition)硅外延技术在 Si(10 0 )衬底上成功地制备了双异质 Si/γ- Al2 O3/Si SOI材料 .利用反射式高能电子衍射 (RHEED)、X射线衍射 (XRD)及俄歇能谱 (AES)对材料进行了表征 .测试结果表明 ,外延生长的 γ- Al2 O3和 Si薄膜都是单晶薄膜 ,其结晶取向为 (10 0 )方向 ,外延层中 Al与 O化学配比为 2∶ 3.同时 ,γ- Al2 O3外延层具有良好的绝缘性能 ,其介电常数为 8.3,击穿场强为 2 .5 MV/cm.AES的结果表明 ,Si/γ- Al2 O3/Si双异质外延 SOI材料两个异质界面陡峭清晰 .更多还原

【Abstract】 Double heteroepitaxial SOI material of Si/γ-Al₂O₃/Si is successfully grown on Si（100） substrate.First,single crystalline γ-Al₂O₃（100） insulator films are grown epitaxially on Si（100） using the sources of TMA （Al（CH₃）₃） and O₂ by very low-pressure chemical vapor deposition （VLP-CVD）.Afterwards,Si（100） epitaxial films are grown on γ-Al₂O₃（100）/Si（100） epi-substrates using an APCVD method.The Si/γ-Al₂O₃/Si SOI materials are characterized in detail by RHEED,XRD and AES techniques.The XRD and RHEED results indicate that both γ-Al₂O₃ and Si epi-layers are single crystal films,and their crystal orientation is Si（100）/γ-Al₂O₃（100）/Si（100）.The AES shows that the ratio of oxygen atoms to aluminum atoms is 3∶2. Meanwhile,the insulator layer of γ-Al₂O₃ has an excellent dielectric property.The dielectric constant of γ-Al₂O₃ films is 8.3 and the breakdown electric field is 2.5MV/cm for the 70nm γ-Al₂O₃ epi-layer.更多还原