【摘要】 在分析了金属 -氧化物 -SiC (MOSiC)器件物理模型的基础上 ,分析了界面等物理效应对器件的影响 ,建立了适于VLSI的MOSiC器件模型。利用当今流行的MATLAB软件 ,模拟了MOSiC器件的电特性。更多还原

【Abstract】 With the character dimension decreasing, some new physical effects appear, for example:surface, interface. Physical Models need rebuilding for VLSI. In this paper, we discuss how these physical effects work on the device after analyzing an old device model of Metal-Oxidation-SiC (MOSiC) and a new MOSiC device model is built for VLSI. The electric character of MOSiC device is simulated by using MATLAB software.更多还原