【摘要】 用纯KOH水溶液和KOH +IPA混合水溶液在 ( 1 0 0 )硅片上沿 <1 0 0 >方向上腐蚀所暴露的平面是不同的。纯KOH水溶液中总是能暴露与衬底垂直的 {1 0 0 }面 ,在KOH +IPA溶液中 ,随着KOH的浓度不同将暴露 {1 1 0 }和 {1 0 0 }面。使用KOH浓度为 50 %的KOH +IPA溶液 ,在 ( 1 0 0 )硅片上一次掩模制作微反射镜和光纤自对准V型槽 ,微镜的表面粗糙度低于 1 0nm。更多还原

【Abstract】 The different crystal faces are produced when the(100) silicon wafer is etched in the <100> direction in th pure aqueous KOH or the mixed aqueous KOH+IPA. The {100} face which is vertical to the substrate is always produced when the wafer is etched in the pure aqueous KOH. When the wafer is etched in KOH+IPA the {110} or {100} face will be produced depending on the concentration of KOH. Using the KOH+IPA solution with 50% concentration of KOH and a one level mask, the reflective micromirror and fiber self aligned V grooves are fabricated on the (100) silicon wafer. The measured surface roughness of the micromirror is below 10nm.更多还原