【摘要】 采用两步熔铝氮化法成功地制备出了 AlN 纳米线。首先,用含氮等离子体电弧法制得 Al+AIN 混合纳米粉。然后,再将 Al+AlN 混合纳米粉在750～850℃下保温1h 进行氮化处理,制备出含有 AlN 纳米线的纯 AlN 纳米材料。经 XRD、TEM和 HR—TEM 的测试表明:AIN 纳米线呈表面平滑的棒状形貌,其直径10～50mm,长度为500 nm～500μm。同时探讨了 AlN纳米线的生长机制。更多还原

【Abstract】 Aluminum nitride(AIN) nanowires were successfully synthesized by nitrogen plasma-molten Al reaction and heat treatment in nitrogen atmosphere.Firstly,the mixture of Al and AIN nanopowders were fabricated by nitrogen plasma-molten Al reaction. Secondy,the mixed nanopowders of Al and AIN were co-heated under an atmosphere of 0.1 MPa nitrogen gas(99.99%) at 750～850℃ for 1 hour.The morphology and structure of AIN nanowires were investigated by transmission electron microscope,high-resolution transmission electron microscopy and X-ray diffraction techniques.The obtained AIN nanowires are surface-smooth and straight,which have a diameter of approximately 10～50 nm and a length of 10～50 nm. Then,a new synthesis mechanism of AIN nanowires was proposed.更多还原